A CMOS Area Image Sensor With Pixel Level A/D Conversion

نویسندگان

  • Boyd Fowler
  • Abbas El Gamal
  • David X. D. Yang
چکیده

A CMOS 64× 64 pixel area image sensor chip using Sigma-Delta modulation at each pixel for A/D conversion is described. The image data output is digital. The chip was fabricated using a 1.2μm two layer metal single layer poly n-well CMOS process. Each pixel block consists of a phototransistor and 22 MOS transistors. Test results demonstrate a dynamic range potentially greater than 93dB, a signal to noise ratio (SNR) of up to 61dB, and dissipation of less than 1mW with a 5V power supply.

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تاریخ انتشار 1994